https://scholars.lib.ntu.edu.tw/handle/123456789/491766| Title: | Effect of hydrogen participation on the improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics by post-deposition remote N <inf>2</inf> , N <inf>2</inf> /H <inf>2</inf> , and NH <inf>3</inf> plasma treatments | Authors: | Huang, L.-T. Chang, M.-L. Huang, J.-J. Kuo, C.-L. Lin, H.-C. Liao, M.-H. Lee, M.-H. Chen, M.-J. MIIN-JANG CHEN |
Issue Date: | 2013 | Journal Volume: | 46 | Journal Issue: | 5 | Source: | Journal of Physics D: Applied Physics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/491766 | DOI: | 10.1088/0022-3727/46/5/055103 |
| Appears in Collections: | 材料科學與工程學系 |
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