https://scholars.lib.ntu.edu.tw/handle/123456789/498724
標題: | Theoretical investigation of the C-V relationship for an amorphous silicon p-n junction | 作者: | Tsai, H.-K. SI-CHEN LEE |
公開日期: | 1989 | 卷: | 32 | 期: | 9 | 起(迄)頁: | 727-731 | 來源出版物: | Solid State Electronics | 摘要: | The use of capacitance-voltage measurement to probe the continuous gap state distribution of hydrogenated amorphous silicon is reconsidered. Since the capacitance is measured by a small a.c. voltage, whereas the data is plotted against d.c. voltage, care must be taken in extracting the gap state density from the slope of the capacitance-voltage curve. It is found that under large reverse bias, the 1/C2-V curve of an a-Si:H p+-n junction shows a linear relation, similar to a crystal junction, and that the density obtained is the total gap state charge density. © 1989. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498724 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0024734228&doi=10.1016%2f0038-1101%2889%2990005-1&partnerID=40&md5=1c0cbdff045b08ba9a8aa12aa78e1335 |
ISSN: | 00381101 | DOI: | 10.1016/0038-1101(89)90005-1 | SDG/關鍵字: | Semiconducting Silicon--Amorphous; Crystal Junction; Gap State Density; Hydrogenated Amorphous Silicon; Silicon p-n Junction; Semiconductor Devices |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。