https://scholars.lib.ntu.edu.tw/handle/123456789/498726
標題: | A method to tune the island size and improve the uniformity for the in situ formation of InGaAs quantum dots on GaAs | 作者: | Chang, S.-Z. Chang, T.-C. SI-CHEN LEE |
公開日期: | 1996 | 卷: | 92 | 起(迄)頁: | 70-73 | 來源出版物: | Applied Surface Science | 摘要: | The use of island formation during the epitaxy of In x Ga 1-x As on GaAs can be applied to the in situ formation of quantum dots. Adjusting the alloy composition toward a larger degree of cation disorder (Ga and In intermixing) can decrease the island size and improve the island uniformity simultaneously. Under the same deposition conditions with a thickness of 15 monolayers, the dot size can be tuned from 125 × 100 to 30 × 28 nm 2 in lateral dimensions as the In composition changes from 1 to 0.5. Among all conditions, In 0.5 Ga 0.5 As dots show a high density of 5 × 10 10 cm -2 and exhibit the best uniformity. These small-sized and dislocation-free islands are of interest for the formation of high-quality quantum dots. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498726 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030562519&doi=10.1016%2f0169-4332%2895%2900205-7&partnerID=40&md5=cc62ea2dba1b90a205aa89de87911fca |
ISSN: | 01694332 | DOI: | 10.1016/0169-4332(95)00205-7 | SDG/關鍵字: | Carrier concentration; Deposition; Epitaxial growth; Monolayers; Semiconducting gallium arsenide; Semiconducting indium; Semiconducting indium compounds; Surface structure; Cation disorder; Island formation; Island size; Island uniformity; Semiconductor quantum dots |
顯示於: | 電機工程學系 |
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