https://scholars.lib.ntu.edu.tw/handle/123456789/498857
標題: | The improvement of polycrystalline silicon TFTs fabricated by employing periodic metal pads | 作者: | Chang, H.-Y. Meng, C.-Y. Tsai, M.-W. Yang, B.-C. Chuang, T.-H. SI-CHEN LEE |
關鍵字: | Photonic crystal; Polycrystalline silicon; Thin-film transistor (TFT) | 公開日期: | 2006 | 卷: | 53 | 期: | 8 | 起(迄)頁: | 1939-1943 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | Polysilicon films with regular-sized and large grains were fabricated by employing periodic metal (Cr-Al) pads as the heat sinks and with underlying silicon oxynitride (SiON) as the heat absorption layer. The poly-Si could grow to regular hexagonal grains after excimer laser annealing (ELA). The thin-film transistors (TFTs) fabricated by this method show uniform characteristics that are suitable for large-area applications. The TFT achieves a field-effect mobility of 270 cm2/V · s and an on-off current ratio exceeding 108. It is found that the TFT with the smaller channel width and length results in a better subthreshold swing because it contains fewer grain boundaries and, thus, fewer defects. After comparing the performance of TFTs using either double-metal Cr-Al or single-metal Al photonic-crystal pads, it is found that the Cr could efficiently impede the diffusion of Al into Si during ELA. © 2006 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498857 https://www.scopus.com/inward/record.uri?eid=2-s2.0-33746621733&doi=10.1109%2fTED.2006.877873&partnerID=40&md5=7ee7fd6907ebc21e95ac0d3a1e399405 |
ISSN: | 00189383 | DOI: | 10.1109/TED.2006.877873 | SDG/關鍵字: | Annealing; Defects; Grain boundaries; Heat sinks; Polysilicon; Semiconductor device manufacture; Heat absorption layer; Periodic metal pads; Photonic crystal; Silicon oxynitride (SiON); Thin film transistors |
顯示於: | 電機工程學系 |
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