https://scholars.lib.ntu.edu.tw/handle/123456789/498859
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yang, P.-C. | en_US |
dc.contributor.author | Hsueh, C.-Y. | en_US |
dc.contributor.author | Yang, C.-H. | en_US |
dc.contributor.author | Lee, J.-H. | en_US |
dc.contributor.author | Lin, H.-W. | en_US |
dc.contributor.author | Chang, H.-Y. | en_US |
dc.contributor.author | Chang, C.-Y. | en_US |
dc.contributor.author | SI-CHEN LEE | - |
dc.creator | Yang, P.-C.;Hsueh, C.-Y.;Yang, C.-H.;Lee, J.-H.;Lin, H.-W.;Chang, H.-Y.;Chang, C.-Y.;Lee, S.-C. | - |
dc.date.accessioned | 2020-06-11T06:23:17Z | - |
dc.date.available | 2020-06-11T06:23:17Z | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 00189383 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/498859 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-49249092518&doi=10.1109%2fTED.2008.925921&partnerID=40&md5=678ffeb142b2fbe43407d6ee14dcc7ab | - |
dc.description.abstract | The polycrystalline silicon with regular square grains is fabricated by employing metallic (Cr/Al) periodic pads as the heat sinks and with underlying silicon oxynitride (SiON) as the heat absorption layer. The maximum lateral growth length of the poly-Si is 1.78 μm by this method. If the metal pads are periodically arranged, the poly-Si can grow to regular square grains following the high power excimer laser annealing. After removing the metallic pads, the low power laser shot transfers the a-Si:H under the original metallic pads to poly-Si without destroying the square grains. The TFTs fabricated by this method achieve a field effect mobility of 450 cm2/V· s and an on/off current ratio exceeding 107. It is found that the TFT with smaller channel width and length results in a better subthreshold swing because it contains fewer grain boundaries and defects. © 2008 IEEE. | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | Polycrystalline silicon; Thin film transistor (TFT) | - |
dc.subject.other | Absorption; Amorphous materials; Annealing; Excimer lasers; Gas lasers; Heat storage; Lasers; Metallic soaps; Metals; Nitrides; Nonmetals; Optical design; Polysilicon; Silicon carbide; Thick films; Thin film devices; Thin film transistors; Transistors; Absorption layers; Excimer-laser annealing; Field-effect mobilities; Heat absorption; High powers; Lateral growth; Low-power lasers; Metal pads; Metallic pads; Poly-Si; Polycrystalline silicon; Silicon Carbide devices; Silicon oxynitride; Thin film transistor (TFT); Silicon | - |
dc.title | Uniform square polycrystalline silicon fabricated by employing periodic metallic pads and SiON absorption layer for thin film transistors | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/TED.2008.925921 | - |
dc.identifier.scopus | 2-s2.0-49249092518 | - |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-49249092518&doi=10.1109%2fTED.2008.925921&partnerID=40&md5=678ffeb142b2fbe43407d6ee14dcc7ab | - |
dc.relation.pages | 2212-2217 | - |
dc.relation.journalvolume | 55 | - |
dc.relation.journalissue | 8 | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | TSMC-NTU Joint Research Center | - |
crisitem.author.orcid | 0000-0002-3788-2030 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 電機工程學系 |
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