https://scholars.lib.ntu.edu.tw/handle/123456789/498865
標題: | High-performance narrow-bandwidth multicolor InAs/AlGaAs/GaAs quantum dot infrared photodetector | 作者: | Chen, S.-D. Chen, Y.-Y. SI-CHEN LEE |
關鍵字: | InAs; Photoluminescence; Quantum dot infrared photodetector; Responsivity; Solid source MBE | 公開日期: | 2005 | 卷: | 44 | 期: | 8 | 起(迄)頁: | 6307-6311 | 來源出版物: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 摘要: | By introducing a 2nm Al0.3Ga0.7As cap layer on InAs/GaAs quantum dots, a high-performance narrow-bandwidth multicolor quantum dot infrared photodetector (QDIP) with peak responses at 5.4, 9.5, and 15.8 μm was fabricated successfully. The highest peak responsivities reached 0.79, 0.47, and 0.63 A/W at a bias of - 1.2V. The two shorter-wavelength responses originating from two different-sized InAs quantum dots were due to the transitions of InAs quantum dots from the ground state to the GaAs conduction band. The separation of the two peaks was amplified by the insertion of the 2 nm AlGaAs cap layer. The longer-wavelength peak at 15.8 μm was due to the transition from the ground state to the first excited state followed by the tunneling out of small quantum dots. The increase in photocarrier lifetime by the barrier is proposed to explain the very high responsivity. © 2005 The Japan Society of Applied Physics. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/498865 https://www.scopus.com/inward/record.uri?eid=2-s2.0-31544478523&doi=10.1143%2fJJAP.44.6307&partnerID=40&md5=3114f3ac0a089681d7e4a4f73a668454 |
ISSN: | 00214922 | DOI: | 10.1143/JJAP.44.6307 | SDG/關鍵字: | Aluminum compounds; Bandwidth; Gallium compounds; Ground state; Infrared detectors; Photoluminescence; Semiconductor quantum dots; InAs; Responsivity; Solid source MBE; Indium compounds |
顯示於: | 電機工程學系 |
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