https://scholars.lib.ntu.edu.tw/handle/123456789/500254
標題: | Dark current and trailing-edge suppression in ultrafast photoconductive switches and terahertz spiral antennas fabricated on multienergy arsenic-ion-implanted GaAs | 作者: | Liu, T.-A. Lee, Y.-C. Wang, S.-C. Tani, M. Wu, H.-H. GONG-RU LIN |
公開日期: | 2005 | 卷: | 98 | 期: | 1 | 來源出版物: | Journal of Applied Physics | 摘要: | We report ultrafast (∼2.7 ps, instrument limited) switching responses of a multienergy-implanted GaAs: As+ photoconductive switches (PCSs) with suppressed trailing edge and reduced dark current. This material is highly resistive with dark current as low as 0.94 μA at a bias of 40 V. The carrier mobility of the former is ∼590 cm2 V s, resulting in a small-signal optical responsivity of ∼2 mAW. Pumped at 100 mW and biased at 80 V, the multienergy-implanted GaAs: As+ PCS exhibits peak response (0.35 V) comparable to the best result of single-energy-implanted ones. The improvement on photoconductive response is crucial for the generation of shorter terahertz emission pulses from spiral antennas fabricated on multienergy-implanted GaAs: As+ (0.8 ps) than single-energy-implanted GaAs (1.2 ps), with the central frequency blueshifted to 0.2 THz (from 0.15 THz) and the spectral bandwidth broadened to 0.18 THz (from 0.11 THz). © 2005 American Institute of Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-22944446104&doi=10.1063%2f1.1953867&partnerID=40&md5=f64d93bc134f263e74dfaaad3406a8dc | ISSN: | 00218979 | DOI: | 10.1063/1.1953867 | SDG/關鍵字: | Dark currents; Photoconductive switches (PCS); Spiral antennas; Terahertz antennas; Antennas; Film growth; Ion implantation; Photoconducting devices; Semiconductor doping; Stoichiometry; Switches; Semiconducting gallium arsenide |
顯示於: | 電機工程學系 |
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