https://scholars.lib.ntu.edu.tw/handle/123456789/503252
標題: | Improved corrosion resistance of GaN electrodes in NaCl electrolyte for photoelectrochemical hydrogen generation | 作者: | Tu, D.-H. Wang, H.-C. Wang, P.-S. Cheng, W.-C. Chen, K.-H. Wu, C.-I. Chattopadhyay, S. Li-Chyong Chen |
公開日期: | 2013 | 出版社: | Elsevier B.V. | 卷: | 38 | 期: | 34 | 起(迄)頁: | 14433-14439 | 來源出版物: | International Journal of Hydrogen Energy | 摘要: | A significant improvement in the stability of high-quality GaN films, for photoelectrochemical hydrogen generation, has been demonstrated using near neutral NaCl(aq) electrolyte instead of conventional acidic HCl (aq). The experimental results conclude that the as-grown surface oxide passivates the surface from corrosion and, therefore, leads to a higher photocurrent. Our result paves the way for the future development of stable hydrogen generation with abundant sea water and high-efficiency III-V compound semiconductors. © 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved. |
URI: | https://www.scopus.com/record/display.uri?eid=2-s2.0-84886730285&origin=resultslist&sort=plf-f&src=s&sid=11aed03874c3c8ccce4a4605b0a957f2&sot=b&sdt=b&s=TITLE-ABS-KEY%28Improved+corrosion+resistance+of+GaN+electrodes+in+NaCl+electrolyte+for+photoelectrochemical+hydrogen+generation%29&sl=127&sessionSearchId=11aed03874c3c8ccce4a4605b0a957f2&relpos=0 | ISSN: | 03603199 | DOI: | 10.1016/j.ijhydene.2013.08.095 | SDG/關鍵字: | GaN; High-efficiency; Hydrogen generations; III-V compound semiconductor; Photoelectrochemical hydrogen; Surface from; Surface oxide; Water splitting; Convergence of numerical methods; Corrosion resistance; Electrochemistry; Electrolytes; Gallium nitride; Seawater; Hydrogen production |
顯示於: | 凝態科學研究中心 |
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