https://scholars.lib.ntu.edu.tw/handle/123456789/503326
標題: | Photoconductivity in single AlN nanowires by subband gap excitation | 作者: | Huang, H.M. Chen, R.S. Chen, H.Y. Liu, T.W. Kuo, C.C. Chen, C.P. Hsu, H.C. LI-CHYONG CHEN Chen, K.H. YING-JAY YANG |
公開日期: | 2010 | 出版社: | American Institute of Physics | 卷: | 96 | 期: | 6 | 起(迄)頁: | 062104-1 - 062104-3 | 來源出版物: | Applied Physics Letters | 摘要: | Photoconductivity of individual aluminum nitride (AlN) nanowires has been characterized using different subband gap excitation sources. It is interesting that both positive (under 1.53 and 2.33 eV excitations) and negative (under 3.06 and 3.81 eV excitations) photocurrent responses are observed from the wide band gap nitride nanowires. The negative photoconductivity, which is attributed to the presence of electron trap and recombination center in the bulk of AlN, is capable to be inversed by a strong positive photoconductive mechanism of surface while changes the ambience from the atmosphere to the vacuum. An oxygen molecular sensitization effect is proposed to be the reason resulting in the enhancement of positive photocurrent and the inversion of negative photoresponse in the vacuum. Understanding of the diverse photoconductivity and its molecular effect is of great importance in the development of energy-selective and highly sensitive nanowire photodetector of AlN in the visible and ultraviolet ranges. © 2010 American Institute of Physics. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/503326 https://www.scopus.com/inward/record.uri?eid=2-s2.0-76749089748&doi=10.1063%2f1.3292211&partnerID=40&md5=9847d86cb4f5717b7e88b44304873e9b |
ISSN: | 00036951 | DOI: | 10.1063/1.3292211 | SDG/關鍵字: | AlN; AlN nanowire; Highly sensitive; Molecular effect; Photocurrent response; Photoresponses; Recombination centers; Subband-gap; Visible and ultraviolet; Wide band gap; Molecular oxygen; Nanowires; Nitrides; Optoelectronic devices; Photoconductivity; Vacuum; Aluminum nitride |
顯示於: | 凝態科學研究中心 |
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