https://scholars.lib.ntu.edu.tw/handle/123456789/503374
標題: | Ultrahigh photocurrent gain in m -axial GaN nanowires | 作者: | Chen, R.-S. Chen, H.-Y. Lu, C.-Y. Chen, K.-H. Chen, C.-P. LI-CHYONG CHEN YING-JAY YANG |
公開日期: | 2007 | 出版社: | American Institute of Physics | 卷: | 91 | 期: | 22 | 起(迄)頁: | 223106-1 - 223106-3 | 來源出版物: | Applied Physics Letters | 摘要: | An ultrahigh photocurrent gain has been found in the ultraviolet-absorbed GaN nanowires with m -directional long axis grown by chemical vapor deposition. The quantitative results have shown the gain values at 5.0× 104 -1.9× 105 of the GaN nanowires with diameters from 40 to 135 nm are near three orders of magnitude higher than the values of 5.2× 101 -1.6× 102 estimated from the thin film counterparts. The intensity-dependent gain study has shown that the gain value is very sensitive to the excitation intensity following an inverse power law and no gain saturation observed in this investigated intensity range from 0.75 to 250 W m2. This behavior has strongly suggested a surface-dominant rather than trap-dominant high gain mechanism in this one-dimensional nanostructure. The strong carrier localization effect induced by the surface electric field in the GaN nanowires is also discussed. © 2007 American Institute of Physics. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/503374 https://www.scopus.com/inward/record.uri?eid=2-s2.0-36649025476&doi=10.1063%2f1.2817595&partnerID=40&md5=da81cff19948077d521932e86c2919a2 |
ISSN: | 00036951 | DOI: | 10.1063/1.2817595 | SDG/關鍵字: | Carrier lifetime; Chemical vapor deposition; Electric excitation; Electric fields; Nanowires; Photocurrents; Excitation intensity; Gain value; Ultrahigh photocurrent gain; Gallium nitride |
顯示於: | 凝態科學研究中心 |
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