https://scholars.lib.ntu.edu.tw/handle/123456789/573420
標題: | Graphene quantum Hall effect parallel resistance arrays | 作者: | Panna A.R Hu I.-F Kruskopf M Patel D.K Jarrett D.G Liu C.-I Payagala S.U Saha D Rigosi A.F Newell D.B CHI-TE LIANG Elmquist R.E. |
關鍵字: | Electric resistance measurement; Graphene; Magnetic leakage; Ohmic contacts; Silicon carbide; Superconducting devices; Arbitrary networks; Chemical functionalization; Crossover leakages; Epitaxial graphene; Parallel resistance; Quantized Hall resistance; Quantizing magnetic field; Two-dimensional structures; Quantum Hall effect | 公開日期: | 2021 | 卷: | 103 | 期: | 7 | 來源出版物: | Physical Review B | 摘要: | As first recognized in 2010, epitaxial graphene on SiC(0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other two-dimensional structures and materials. Here we report graphene parallel QHR arrays, with metrologically precise quantization near 1000ω. These arrays have tunable carrier densities, due to uniform epitaxial growth and chemical functionalization, allowing quantization at the robust ν=2 filling factor in array devices at relative precision better than 10-8. Broad tunability of the carrier density also enables investigation of the ν=6 plateau. Optimized networks of QHR devices described in this work suppress Ohmic contact resistance error using branched contacts and avoid crossover leakage with interconnections that are superconducting for quantizing magnetic fields up to 13.5 T. Our work enables more direct scaling of resistance for quantized values in arrays of arbitrary network geometry. ? 2021 authors. Published by the American Physical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100692744&doi=10.1103%2fPhysRevB.103.075408&partnerID=40&md5=5db3d6cbbf8485e87a45a1acb06623d6 https://scholars.lib.ntu.edu.tw/handle/123456789/573420 |
ISSN: | 24699950 | DOI: | 10.1103/PhysRevB.103.075408 |
顯示於: | 物理學系 |
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