https://scholars.lib.ntu.edu.tw/handle/123456789/575809
標題: | Revealing the mechanism of carrier transport in host-guest systems of organic materials with a modified Poisson and drift-diffusion solver | 作者: | Huang J.-Y Lee J.-H Wu Y.-R Chen T.-Y Chiu Y.-C Huang J.-J Leung M.-K MAN-KIT LEUNG JIUN-HAW LEE YUH-RENN WU |
關鍵字: | Carrier transport; Hall mobility; Ising model; Semiconductor doping; Dopant concentrations; Driftdiffusion equations; Host-guest system; Mobility characteristics; Numerical solvers; Organic materials; Physical mechanism; Space charge limited currents; Hole mobility | 公開日期: | 2020 | 卷: | 4 | 期: | 12 | 來源出版物: | Physical Review Materials | 摘要: | A numerical solver based on two-dimensional Poisson and drift-diffusion equations with Gaussian-shaped density of states, the Poole-Frenkel field mobility model, and the Ising model are proposed to analyze carrier transport in the host-guest systems based on organic semiconductors. To investigate the performance of this solver, a series of the electron-only devices and hole-only devices are fabricated with different dopant concentrations. The space-charge-limited current model is applied to the simulation results to calculate the mobility. In addition, experimental results for different host-guest systems are compared to prove the accuracy of the solver. The solver is able to explain the physical mechanisms in different situations. At lower dopant concentrations, the guest states act as traps. Carriers are localized in these guest states, and the carrier mobility decreases dramatically. At the higher dopant concentrations, regions of guest material are able to connect with each other, and carriers have a probability to hop through the guest states. The mobility characteristics gradually approach those of the pure guest material. ? 2020 American Physical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098159286&doi=10.1103%2fPhysRevMaterials.4.125602&partnerID=40&md5=6cf2d2c5edd57974e950a62b166f5568 https://scholars.lib.ntu.edu.tw/handle/123456789/575809 |
ISSN: | 24759953 | DOI: | 10.1103/PhysRevMaterials.4.125602 |
顯示於: | 化學系 |
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