https://scholars.lib.ntu.edu.tw/handle/123456789/580554
標題: | 406 MHz modulation bandwidth of GaN-based light-emitting diodes with improved transparent p-contact design | 作者: | Lan H.-Y Lin Y.-Y Chang C.-H Wu C.-H. CHAO-HSIN WU |
關鍵字: | Bandwidth; Frequency response; Gallium nitride; Light; Light modulation; Manufacture; Modulation; Optical communication; Optical signal processing; Semiconductor device manufacture; Semiconductor diodes; Semiconductor junctions; Wide band gap semiconductors; Contact layers; Current spreading; GaN based LED; GaN-based light-emitting diodes; Injection current density; Modulation bandwidth; Optical frequency response; Visible light communications (VLC); Light emitting diodes | 公開日期: | 2017 | 來源出版物: | CS MANTECH 2017 - 2017 International Conference on Compound Semiconductor Manufacturing Technology | 摘要: | In this report, the optical frequency responses of GaN-based LEDs with different p-contact designs are presented. The higher modulation bandwidth is owing to better current spreading with embedded transparency contact layer (TCL). The f-3dB-J curve of the LEDs with TCL exhibits higher injection current density and optical modulation bandwidth. The highest f-3dB up to 406 MHz is achieved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029537358&partnerID=40&md5=b62a8a6348833e00033c01f4a880e47d https://scholars.lib.ntu.edu.tw/handle/123456789/580554 |
顯示於: | 電機工程學系 |
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