https://scholars.lib.ntu.edu.tw/handle/123456789/580643
標題: | Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch | 作者: | Tu C.-T Huang Y.-S Cheng C.-Y Tsai C.-E Chen J.-Y Ye H.-Y Lu F.-L Liu C.W. CHEE-WEE LIU |
關鍵字: | Dry etching; Germanium; Nanosheets; Quantum theory; Semiconductor alloys; Surface roughness; Channel mobility; Channel uniformity; Detection limits; Heavily doped; Impurity scattering; Quantum mechanical simulations; Small strains; Surface roughness scattering; Tin alloys | 公開日期: | 2021 | 卷: | 68 | 期: | 4 | 起(迄)頁: | 2071-2076 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | The undoped 4-stacked Ge0.9Sn0.1 nanosheets sandwiched by double Ge0.95Sn0.05 caps without parasitic Ge channels underneath are realized by a radical-based highly selective isotropic dry etching. Highly inter-channel uniformity of the stacked GeSn nanosheets is realized by thin Ge0.9Sn0.1 (5 nm) channels and thick Ge0.95Sn0.05 caps to achieve high mathrm{I}-{mathrm{scriptscriptstyle ON}}. The caps are the barriers to separate the holes from the dielectrics/cap interface to reduce the surface roughness scattering. The double caps with small strain also stabilize the channels to prevent the channel buckling. The undoped GeSn nanosheets with [B] below the detection limit ( < {1} times {10}{{17}} cm {-{3}} ) and heavily doped ( sim {2} times {10}{{21}} cm {-{3}} ) Ge at S/D can suppress the impurity scattering to increase the channel mobility and can reduce the S/D resistance, respectively. The high {I}-{{mathrm{scriptscriptstyle ON}}} = {73},,mu text{A} per stack (86 mu text{A}/mu text{m} , normalized by the total perimeter of nanosheets) at {V}-{text {OV}} = {V}-{text {DS}} =-{0.5} V is achieved for the device with the sheet width of 80 nm and the Lg of 80 nm. The quantum mechanical simulation shows that there is heavy hole population at the two ends of nanosheets. ? 1963-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100490418&doi=10.1109%2fTED.2021.3050430&partnerID=40&md5=0c3b3eb50a89cc0bb2275c6a69bd8469 https://scholars.lib.ntu.edu.tw/handle/123456789/580643 |
ISSN: | 00189383 | DOI: | 10.1109/TED.2021.3050430 |
顯示於: | 電機工程學系 |
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