https://scholars.lib.ntu.edu.tw/handle/123456789/580646
標題: | Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process | 作者: | CHEE-WEE LIU Huang Y.-S Lu F.-L Tsou Y.-J Ye H.-Y Lin S.-Y Huang W.-H CHEE-WEE LIU |
關鍵字: | Budget control; Chemical vapor deposition; Electric resistance; Etching; Germanium; High resolution transmission electron microscopy; Ions; Semiconductor alloys; Semiconductor quantum wells; Silicon; Silicon on insulator technology; Silicon wafers; Surface roughness; Transmission electron microscopy; Chemical vapor depositions (CVD); Cvd growths; GeSn; Junctionless devices; Parasitic resistances; Rough surfaces; Silicon on insulator wafers; stacked channel GAAFETs; Tin alloys | 公開日期: | 2018 | 卷: | 39 | 期: | 9 | 起(迄)頁: | 1274-1277 | 來源出版物: | IEEE Electron Device Letters | 摘要: | Fully compressively strained GeSn quantum-well channels sandwiched by Ge sacrificial layers on 200-mm silicon-on-insulator (SOI) wafers are grown using chemical vapor deposition. The transmission electron microscopy images indicate that dislocations are confined near the relaxed Ge buffer/SOI interface, resulting in low defect densities in the stacked GeSn channels. The top Ge cap is essential to ensure that the top GeSn channel matches the other two channels during the Ge etching. Channel release is obtained by etching of the Ge sacrificial layers with optimum ultrasonic-assisted H2O2. The low thermal budget gate-stack (400 °C) and S/D parasitic resistance reduction are achieved. The first stacked 3-Ge0.93Sn0.07-channel p-gate-all-around FET with LCH= 60 nm has a record high ION=1975μ A/μ m (per channel width) at VOV=VDS=-1 V, among all GeSn pFETs. The junctionless device structure is used to simplify the process. ? 1980-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85049487307&doi=10.1109%2fLED.2018.2852775&partnerID=40&md5=61d0950d5b087f16677380924b869cdf https://scholars.lib.ntu.edu.tw/handle/123456789/580646 |
ISSN: | 07413106 | DOI: | 10.1109/LED.2018.2852775 |
顯示於: | 電機工程學系 |
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