https://scholars.lib.ntu.edu.tw/handle/123456789/580700
標題: | Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer | 作者: | CHIH-I WU | 關鍵字: | III-V semiconductors; Current injections; Electrical characteristic; Peak emission wavelength; Relative illumination; Reverse leakage current; Surface recombinations; Temperature dependent; Thermal activation; Gallium nitride | 公開日期: | 2020 | 卷: | 12 | 期: | 6 | 來源出版物: | IEEE Photonics Journal | 摘要: | We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices. ? 2009-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85097788160&doi=10.1109%2fJPHOT.2020.3037220&partnerID=40&md5=c30b9fc7424f07787eae887b089c2082 https://scholars.lib.ntu.edu.tw/handle/123456789/580700 |
ISSN: | 19430655 | DOI: | 10.1109/JPHOT.2020.3037220 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。