https://scholars.lib.ntu.edu.tw/handle/123456789/580713
標題: | Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-LgProduct of 13.9 GHz-μm | 作者: | CHIH-I WU Tu P.-T Sanyal I Yeh P.-C Lee H.-Y Lee L.-H Wu C.-I Chyi J.-I. CHIH-I WU |
關鍵字: | Electron mobility; Gallium nitride; III-V semiconductors; Silicon wafers; VLSI circuits; AlInGaN; Gan on si; High electron mobility transistor (HEMTs); High resistivity silicon; Large-signals; Power densities; Quaternary AlInGaN; Quaternary barriers; High electron mobility transistors | 公開日期: | 2020 | 起(迄)頁: | 130-131 | 來源出版物: | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | 摘要: | Quaternary AlInGaN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon wafer were fabricated, with T-gate of 0.14 μm footprint. The HEMTs devices exhibit Ids,sat = 908 mA/mm and gm = 451 mS/mm. In small-signal operation, cut-off frequency FT/FMAX = 100/97 GHz are achieved, which gives a high value of (FTLg) = 13.9 GHzμm among the reported GaN-on-Si devices. In large signal operation, power density of 1.7 W/mm and PAE = 33% were achieved at 10GHz, and 1.1 W/mm and PAE = 20% at 28 GHz. ? 2020 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85093697896&doi=10.1109%2fVLSI-TSA48913.2020.9203728&partnerID=40&md5=9599f9f3fac5e17cfd664e898ae63865 https://scholars.lib.ntu.edu.tw/handle/123456789/580713 |
DOI: | 10.1109/VLSI-TSA48913.2020.9203728 |
顯示於: | 電機工程學系 |
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