https://scholars.lib.ntu.edu.tw/handle/123456789/580889
標題: | A V-Band Power Amplifier with 23.7-dBm Output Power, 22.1% PAE, and 29.7-dB Gain in 65-nm CMOS Technology | 作者: | Chang Y Wang Y Chen C.-N Wu Y.-C Wang H. HUEI WANG |
關鍵字: | Analog circuits; Cascode amplifiers; CMOS integrated circuits; Differential amplifiers; Efficiency; Millimeter waves; Cascode; differential; Millimeter-wave (mm-wave); Power combiner; transformer; Power amplifiers | 公開日期: | 2019 | 卷: | 67 | 期: | 11 | 起(迄)頁: | 4418-4426 | 來源出版物: | IEEE Transactions on Microwave Theory and Techniques | 摘要: | This article presents a V-band three-stage power amplifier (PA) fabricated in 65-nm CMOS technology with remarkable performances of output power, efficiency, and power gain. A cascode amplifier is proposed to optimize the power performances at millimeter-wave (mm-wave). A current-combining radial structure transformer power combiner with a low impedance transmission line is used to combine four differential power cells efficiently and to further improve the output power. Meanwhile, two common-source (CS) amplifiers are cascaded to achieve high power gain. The measured results of the proposed PA demonstrate the saturated output power (P{\mathrm {sat}} ) of 23.7 dBm, output 1-dB compression point (OP1 dB) of 19.9 dBm, peak power added efficiency (PAE) of 22.1%, and 29.7-dB power gain at 60 GHz with only 0.653-mm2 chip size. ? 1963-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85077461948&doi=10.1109%2fTMTT.2019.2939527&partnerID=40&md5=29219c5fd04a5a40038fcad305dc2cdc https://scholars.lib.ntu.edu.tw/handle/123456789/580889 |
ISSN: | 00189480 | DOI: | 10.1109/TMTT.2019.2939527 |
顯示於: | 電機工程學系 |
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