https://scholars.lib.ntu.edu.tw/handle/123456789/580890
標題: | A V-band power amplifier with transformer combining and neutralization technique in 40-nm COMS | 作者: | Wang J.-K Lin Y.-H Hsiao Y.-H Yeh K.-S Wang H. HUEI WANG |
關鍵字: | Amplifiers (electronic); DC transformers; Electric transformers; Radio waves; 40nm cmos; dc path of metal-one; neutralization technique; Output stages; Peak gain; Peak power; Power combining; Saturated output power (Psat); Power amplifiers | 公開日期: | 2017 | 起(迄)頁: | 113-116 | 來源出版物: | 2017 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2017 | 摘要: | A V-band transformer-base power amplifier (PA) is implemented in 40nm CMOS. It is a three-stage PA with eight-way transformer combining at output stage. This PA uses the transformers with dc path of metal-one and neutralization technique to improve the passive loss and asymmetric problem, as well as the gain and stability. The PA achieves a measured saturated output power (Psat) of 19.8 dBm with 18.3% peak power-added efficiencies (PAE) at 60 GHz. The peak gain is 25.5 dB at 54.5 GHz with a 3-dB bandwidth of 11.4 GHz from 51 to 62.4 GHz. ? 2017 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85032811583&doi=10.1109%2fRFIT.2017.8048220&partnerID=40&md5=2d7aafd020010dc631d3ef55763531b6 https://scholars.lib.ntu.edu.tw/handle/123456789/580890 |
DOI: | 10.1109/RFIT.2017.8048220 |
顯示於: | 電機工程學系 |
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