https://scholars.lib.ntu.edu.tw/handle/123456789/581265
標題: | Modeling dislocation-related reverse bias leakage in GaN p-n diodes | 作者: | Qwah K.S Robertson C.A Wu Y.-R Speck J.S. YUH-RENN WU |
關鍵字: | Crystal orientation; Crystal symmetry; Diodes; Electric fields; Energy gap; III-V semiconductors; Semiconductor junctions; Cylindrical symmetry; Electron hole pairs; Experimental values; Finite element analysis software; Threading dislocation; Threading dislocation densities; Trap assisted tunneling; Trap state density; Gallium nitride | 公開日期: | 2021 | 卷: | 36 | 期: | 7 | 來源出版物: | Semiconductor Science and Technology | 摘要: | Finite element analysis software was used to model and visualize two p-n junction models: one with a single threading dislocation (TD) and a control without one. TDs are modeled as a Gaussian distribution of trap states with a full width at half maximum value of 5 nm localized around the r = 0 line in a cylindrical coordination such that the linear trap state density was 1 trap c-1-translation; this model allows the cylindrical symmetry of the c-plane GaN crystal orientation to be used to avoid more computationally intensive 3D models. In this work, a vertical p-n diode with typical doping characteristics and an equivalent threading dislocation density of 108 cm2 was modeled in reverse bias. Our simulations show that the dislocation-mediated leakage mechanism for reverse bias leakage in GaN p-n diodes is the generation of electron-hole pairs via a trap-assisted tunneling mechanism whereby electrons from the valence band use the intermediate trap state to traverse the band gap. This mechanism results in electron-hole pairs that are swept out of the junction by the reverse bias electric field. This behavior results in a measurable leakage current within the model with behavior consistent with experimental values. ? 2021 IOP Publishing Ltd. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85107667254&doi=10.1088%2f1361-6641%2fabfdfc&partnerID=40&md5=9f8adec8e9a2c3b12e881e1b95ecd83b https://scholars.lib.ntu.edu.tw/handle/123456789/581265 |
ISSN: | 02681242 | DOI: | 10.1088/1361-6641/abfdfc |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。