https://scholars.lib.ntu.edu.tw/handle/123456789/581268
標題: | Giant gauge factor of Van der Waals material based strain sensors | 作者: | YUH-RENN WU | 關鍵字: | nanosheet; concentration (composition); factor analysis; gauge; sensor; strain; absorption; Article; body movement; density functional theory; device failure; dielectric constant; dipole; electric current; Fourier transform; human; illumination; oscillation; piezoelectricity; proof of concept; refraction index; remote sensing; shear stress; sound; stretching; vibration; Young modulus | 公開日期: | 2021 | 卷: | 12 | 期: | 1 | 來源出版物: | Nature Communications | 摘要: | There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS2 sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS2, GaSe, GeSe, monolayer WSe2, and monolayer MoSe2 sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements. ? 2021, The Author(s). |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85103806388&doi=10.1038%2fs41467-021-22316-8&partnerID=40&md5=612f907e79d76e0122152f3e065d7c20 https://scholars.lib.ntu.edu.tw/handle/123456789/581268 |
ISSN: | 20411723 | DOI: | 10.1038/s41467-021-22316-8 |
顯示於: | 電機工程學系 |
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