https://scholars.lib.ntu.edu.tw/handle/123456789/598960
標題: | The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology | 作者: | Yen C Chang S Chen K Feng Y Chen L Liao B Lee M Chen S Liao M. MING-HAN LIAO |
關鍵字: | 3-D stacking technology;Bonding;Carbon nanotubes;carbon nanotubes (CNTs);Conductivity;ferrocene Fe(C₅H₅)₂;Iron;Silicon;Stacking;Through-silicon vias;through-silicon vias (TSVs). | 公開日期: | 2022 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | With the usage of gas ferrocene Fe(C₅H₅)₂ as a reactant, which is different from the traditional thin Fe film, to grow the high-quality carbon nanotubes (CNTs) in the high aspect ratio (AR) trench structure, it has many advantages to be the through-silicon vias (TSVs) material for the three-dimensional (3-D) stacking technology. In this work, we successfully demonstrate the full process flow, including CNT growing, chemical-mechanical planarization (CMP), and wafer temporary bonding for CNTs as TSVs in the 3-D stacking connection. The flexibility for this demonstrated process flow makes the integration of real high dense devices and CNTs as TSVs for the 3-D connection more easily. IEEE |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85123301998&doi=10.1109%2fTED.2022.3140705&partnerID=40&md5=1b6bfe3ed98edac9f64fd6d0351f314f https://scholars.lib.ntu.edu.tw/handle/123456789/598960 |
ISSN: | 00189383 | DOI: | 10.1109/TED.2022.3140705 |
顯示於: | 機械工程學系 |
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