https://scholars.lib.ntu.edu.tw/handle/123456789/599061
標題: | Manufacturing and characterization of three-axis magnetic sensors using the standard 180 nm cmos technology | 作者: | Wu C.-H Shih P.-J Tsai Y.-C Dai C.-L. PO-JEN SHIH |
關鍵字: | CMOS;High sensitivity;MEMS;Micro magnetic sensor;Three-axis sensing;CMOS integrated circuits;Magnetism;Metals;MOS devices;Oxide semiconductors;CMOS technology;Complementary metal oxide semiconductors;Complementary metal-oxide-semiconductor technologies;Magnetic sensing elements;Magnetic-field;Micro-magnetic sensors;Sensor designs;Three axes;Magnetic sensors;oxide;magnetic field;semiconductor;software;technology;Magnetic Fields;Oxides;Semiconductors;Software;Technology | 公開日期: | 2021 | 卷: | 21 | 期: | 21 | 來源出版物: | Sensors | 摘要: | A three-axis micro magnetic sensor (MS) is developed based on the standard 180 nm complementary metal oxide semiconductor (CMOS) technology. The MS designs two magnetic sensing elements (MSEs), which consists of an x/y?MSE and an z?MSE, to reduce cross-sensitivity. The x/y?MSE is constructed by an x?MSE and an y?MSE that are respectively employed to detect in the x? and y?direction magnetic field (MF). The z?MSE is used to sense in the z?direction MF. The x/y?MSE, which is constructed by two magnetotransistors, designs four additional collectors that are employed to increase the sensing current and to enhance the sensitivity of the MS. The Sentaurus TCAD software simulates the characteristic of the MS. The measured results reveal that the MS sensitivity is 534 mV/T in the x?direction MF, 525 mV/T in the y?direction MF and 119 mV/T in the z?axis MF. ? 2021 by the authors. Licensee MDPI, Basel, Switzerland. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85117310738&doi=10.3390%2fs21216953&partnerID=40&md5=4f5a48a2845dbdb67a095bc8a789ea89 https://scholars.lib.ntu.edu.tw/handle/123456789/599061 |
ISSN: | 14248220 | DOI: | 10.3390/s21216953 |
顯示於: | 醫學工程學研究所 |
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