https://scholars.lib.ntu.edu.tw/handle/123456789/607317
標題: | An Efficient and Linear 24.4dBm Ka-Band GaAs Power Amplifier for 5G Communication | 作者: | Chuang K.-J Tang K.P Lin Y.-H Chen T.-H Wu C.-S TIAN-WEI HUANG |
關鍵字: | 5G;GaAs;Ka-band.;linear;millimeter wave;PAE;Power Amplifier;5G mobile communication systems;Gallium arsenide;High electron mobility transistors;III-V semiconductors;Power amplifiers;Semiconducting gallium;High electron-mobility transistors;Ka band;Ka-band power amplifier;Linear;Peak gain;Peak power;Power-added-efficiency;Transistor process;Millimeter waves | 公開日期: | 2021 | 來源出版物: | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 | 摘要: | A linear and highly efficient Ka-band power amplifier (PA) for the fifth generation mobile network (5G) application is realized on a 0.15-μm Gallium Arsenide (GaAs) D-mode pseudomorphic high electron mobility transistor (p-HEMT) process. A peak power added efficiency (PAEmax) of 43.4%, with peak gain of 21.2dB and saturated output power (Psat) of 24.4dBm is recorded at 27 GHz in measurement. The PA provides a higher than 36.7% PAEmax with above 20dB gain and 23.8dBm Psat across the frequency range of 25 to 31GHz. The two-stage PA also achieves an up to 21.5% average PAE (PAEavg) for a-30.5dB rms error vector magnitude (EVM) at 64-Quadrature amplitude modulation (64-QAM) with 100MHz of channel bandwidth (BW). ? 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85118192170&doi=10.1109%2fRFIT52905.2021.9565269&partnerID=40&md5=ab67d1c1df3e661edfd01a958024a445 https://scholars.lib.ntu.edu.tw/handle/123456789/607317 |
DOI: | 10.1109/RFIT52905.2021.9565269 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。