https://scholars.lib.ntu.edu.tw/handle/123456789/614657
標題: | Achieving Ultra-long GaN Nanorod Growth by Lowering Nucleation Energy Via Surface Modification for Optical Sensors | 作者: | Huang C.-H.; Chou Y.-C. YI-CHIA CHOU |
關鍵字: | Aluminum nitride; Aspect ratio; Cathodoluminescence; Crystallization; Energy gap; Growth temperature; III-V semiconductors; Nanorods; Nucleation; Optical properties; Band-gap emission; Diffusion pathways; High temperature; Hydride vapor phase epitaxy; Luminescence intensity; Nucleation barrier; Nucleation energy; Sensing material; Gallium nitride | 公開日期: | 2020 | 出版社: | American Chemical Society | 卷: | 3 | 期: | 9 | 起(迄)頁: | 8949-8957 | 來源出版物: | ACS Applied Nano Materials | 摘要: | We introduce a pit-formation method on a GaN substrate to obtain ultra-long GaN nanorods (NRs) grown homoepitaxially through hydride vapor phase epitaxy (HVPE) without an additional catalyst or a complex lithography procedure. The pits were created by annealing and nitridation at a high temperature on the GaN substrate; thus, GaN NRs were pinned at the pits during growth processes. The nucleation barrier of the GaN NR can be lowered by creating pits on the GaN substrate, leading to a higher possibility of triggering NR growth at a higher growth temperature. The conditions of the growth temperature were found to critically influence the NR aspect ratio and height. The GaN NRs with c-orientation achieves an ∼11.2 μm height in average in 20 min where the maximum height reaches 12.7 μm. The possible diffusion pathway of Ga adatoms was also discussed to reach the maximum height of a GaN NR at various growth temperatures. In addition, room-temperature cathodoluminescence measurements on the GaN NRs show a GaN-related near band gap emission peak and the luminescence intensity is even better than that of the GaN substrate. Such ultra-long GaN nanorods with the optical properties can be evaluated for sensing materials. Copyright © 2020 American Chemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85094673038&doi=10.1021%2facsanm.0c01658&partnerID=40&md5=205d618bbef398a38795e6d54426f9a8 https://scholars.lib.ntu.edu.tw/handle/123456789/614657 |
ISSN: | 25740970 | DOI: | 10.1021/acsanm.0c01658 |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。