https://scholars.lib.ntu.edu.tw/handle/123456789/614662
標題: | Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process | 作者: | Chiang Y.-T.; Chou Y.; Huang C.-H.; Lin W.-T.; Chou Y.-C. YI-CHIA CHOU |
關鍵字: | Gallium nitride; III-V semiconductors; Morphology; Nanowires; Nickel compounds; Silicides; Substrates; Branched nanowires; Crystal facets; GaN nanowires; GaN substrate; Morphology and structures; Structure and orientation; Substrate lattice; Whole process; Silicon | 公開日期: | 2019 | 出版社: | Royal Society of Chemistry | 卷: | 21 | 期: | 29 | 起(迄)頁: | 4298-4304 | 來源出版物: | CrystEngComm | 摘要: | We investigated the vapor-solid-solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates. The morphology and structures of Si on these substrates are distinct, and are dependent on substrate lattices and an epitaxy process during growth. The sidewall facets and epitaxy of silicides and Si were discussed. In addition, Si grown on GaN nanowires was investigated which led to the formation of branched nanowire structures. The Si nanowires/nanodots lie on the surface of GaN nanowires to maintain lower system energy. We manipulated the whole process in a UHV and studied the crystal growth of Si on different lattice substrates. Meanwhile, the process which occurred in a non-UHV led to less regularity on the NiSi2 crystal facets and interface epitaxy between NiSi2 and Si nanowires. © 2019 The Royal Society of Chemistry. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85069459659&doi=10.1039%2fc9ce00539k&partnerID=40&md5=9583f714e8794bf0991140df81bcac73 https://scholars.lib.ntu.edu.tw/handle/123456789/614662 |
ISSN: | 14668033 | 其他識別: | CRECF | DOI: | 10.1039/c9ce00539k |
顯示於: | 材料科學與工程學系 |
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