https://scholars.lib.ntu.edu.tw/handle/123456789/614664
標題: | Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon | 作者: | Wu K.-L.; Chou Y.; Su C.-C.; Yang C.-C.; Lee W.-I.; Chou Y.-C. YI-CHIA CHOU |
公開日期: | 2017 | 出版社: | Nature Publishing Group | 卷: | 7 | 期: | 1 | 來源出版物: | Scientific Reports | 摘要: | We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in molecular beam epitaxy. The effects of V/III ratio and carrier gas flow on growth are discussed regarding surface polarity and sticking coefficient of molecules. The nanowires of gallium nitride exhibit excellent crystallinity with smooth and straight morphology and uniform orientation. The growth mechanism follows self-assembly from both catalysts, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires. The photoluminescence of such nanowires are adjustable by tuning the growth parameters to achieve blue emission. The practical range of parameters for mass production of such high crystal quality and uniformity of nanowires is suggested. © 2017 The Author(s). |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85038640360&doi=10.1038%2fs41598-017-17980-0&partnerID=40&md5=8756b88078d9023e55e2d665725cdc98 https://scholars.lib.ntu.edu.tw/handle/123456789/614664 |
ISSN: | 20452322 | DOI: | 10.1038/s41598-017-17980-0 |
顯示於: | 材料科學與工程學系 |
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