https://scholars.lib.ntu.edu.tw/handle/123456789/614666
標題: | Ultralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Silicon | 作者: | Chiu S.-P.; Yeh S.-S.; Chiou C.-J.; Chou Y.-C.; Lin J.-J.; Tsuei C.-C. YI-CHIA CHOU |
關鍵字: | Dangling bonds; Heterojunctions; High resolution transmission electron microscopy; Quantum computers; Quantum optics; Silicides; Silicon; Silicon oxides; Transmission electron microscopy; Cobalt disilicide; Cross sectional transmission electron microscopy; Fluctuators; Interfacial dynamics; Resistance noise; Silicon-based integrated circuits; Single-crystalline; Superconducting circuit; Superconducting transition temperature | 公開日期: | 2017 | 出版社: | American Chemical Society | 卷: | 11 | 期: | 1 | 起(迄)頁: | 516-525 | 來源出版物: | ACS Nano | 摘要: | High-precision resistance noise measurements indicate that the epitaxial CoSi2/Si heterostructures at 150 and 2 K (slightly above its superconducting transition temperature Tc of 1.54 K) exhibit an unusually low 1/f noise level in the frequency range of 0.008-0.2 Hz. This corresponds to an upper limit of Hooge constant γ ≤ 3 × 10-6, about 100 times lower than that of single-crystalline aluminum films on SiO2 capped Si substrates. Supported by high-resolution cross-sectional transmission electron microscopy studies, our analysis reveals that the 1/f noise is dominated by excess interfacial Si atoms and their dimer reconstruction induced fluctuators. Unbonded orbitals (i.e., dangling bonds) on excess Si atoms are intrinsically rare at the epitaxial CoSi2/Si(100) interface, giving limited trapping-detrapping centers for localized charges. With its excellent normal-state properties, CoSi2 has been used in silicon-based integrated circuits for decades. The intrinsically low noise properties discovered in this work could be utilized for developing quiet qubits and scalable superconducting circuits for future quantum computing. © 2016 American Chemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85018485523&doi=10.1021%2facsnano.6b06553&partnerID=40&md5=ab6ef0a9abb5cda9530e1fe7584eac7d https://scholars.lib.ntu.edu.tw/handle/123456789/614666 |
ISSN: | 19360851 | DOI: | 10.1021/acsnano.6b06553 |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。