https://scholars.lib.ntu.edu.tw/handle/123456789/614671
標題: | Effects of atomic scale imperfection at the interfaces of CoSi2 and Si (100) on Schottky barrier contacts | 作者: | Chiou C.-J.; Chiu S.-P.; Lin J.-J.; Chou Y.-C. YI-CHIA CHOU |
公開日期: | 2015 | 出版社: | Royal Society of Chemistry | 卷: | 17 | 期: | 23 | 起(迄)頁: | 4276-4280 | 來源出版物: | CrystEngComm | 摘要: | We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moiré fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts. © The Royal Society of Chemistry 2015. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84930960092&doi=10.1039%2fc5ce00655d&partnerID=40&md5=238c55c80ff2c501e3952e2b33285a29 https://scholars.lib.ntu.edu.tw/handle/123456789/614671 |
ISSN: | 14668033 | 其他識別: | CRECF | DOI: | 10.1039/c5ce00655d |
顯示於: | 材料科學與工程學系 |
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