https://scholars.lib.ntu.edu.tw/handle/123456789/616400
標題: | Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation | 作者: | Dhara S. Datta A. Wu C.T. Lan Z.H. Chen K.H. Wang Y.L. Hsu C.W. Shen C.H. Chen L.C. Chen C.C. LI-CHYONG CHEN |
公開日期: | 2004 | 卷: | 84 | 期: | 26 | 起(迄)頁: | 5473-5475 | 來源出版物: | Applied Physics Letters | 摘要: | Hexagonal-to-cubic phase transformation was carried out in gallium nitride nanowires using gallium ion implantation. The phase transformation was confirmed by performing optical photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy (HRTEM). The deposition of Gallium from the implanted source reduced the surface energy and stablized the cubic phase. It was found that the fluctuations in the short-range order induced by dynamic annealing with the irradiation process stabilize the cubic phase and cause the phase transformation. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-3242740337&doi=10.1063%2f1.1760593&partnerID=40&md5=a17430e0830e897b4377f337bbef55ff https://scholars.lib.ntu.edu.tw/handle/123456789/616400 |
ISSN: | 00036951 | DOI: | 10.1063/1.1760593 | SDG/關鍵字: | Annealing;Cathodoluminescence;Crystallography;Epitaxial growth;Gallium nitride;Interfacial energy;Ion beams;Ion implantation;Irradiation;Kinetic theory;Lattice constants;Phonons;Photoluminescence;Positive ions;Substrates;Transmission electron microscopy;Defect annihilation;High resolution transmission electron microscopy (HRTEM);Nanowires;Zinc-blend structure;Phase transitions |
顯示於: | 凝態科學研究中心 |
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