https://scholars.lib.ntu.edu.tw/handle/123456789/616401
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsu C.-H. | en_US |
dc.contributor.author | Lo H.-C. | en_US |
dc.contributor.author | Chen C.-F. | en_US |
dc.contributor.author | Wu C.T. | en_US |
dc.contributor.author | Hwang J.-S. | en_US |
dc.contributor.author | Das D. | en_US |
dc.contributor.author | Tsai J. | en_US |
dc.contributor.author | Chen L.-C. | en_US |
dc.contributor.author | Chen K.-H. | en_US |
dc.contributor.author | LI-CHYONG CHEN | zz |
dc.creator | Hsu C.-H.; Lo H.-C.; Chen C.-F.; Wu C.T.; Hwang J.-S.; Das D.; Tsai J.; Chen L.-C.; Chen K.-H. | - |
dc.date.accessioned | 2022-08-09T03:50:37Z | - |
dc.date.available | 2022-08-09T03:50:37Z | - |
dc.date.issued | 2004 | - |
dc.identifier.issn | 15306984 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-1642528431&doi=10.1021%2fnl049925t&partnerID=40&md5=7b68814dc6a0d62d4ff06de29ded9fcf | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/616401 | - |
dc.description.abstract | Well-aligned nanotip arrays were fabricated by electron cyclotron resonance (ECR) plasma process using gas mixtures of silane, methane, argon, and hydrogen. The resultant tips have nanoscale apexes (∼1 nm) with high aspect ratios (∼50), which were achieved by simultaneous SiC nanomask formation and dry etching during ECR plasma process. This technique was applied to a variety of substrates such as silicon, polycrystalline silicon, gallium nitride, gallium phosphide, sapphire, and aluminum, indicating its general applicability. High-resolution transmission electron microscopy and Auger depth profile analyses revealed that the SiC cap, with Si:C ratio of 1:1, exhibited 3C-SiC and 2H-SiC structure on Si and GaP, respectively, with heteroepitaxial relationship. This one-step self-masked dry etching technique enables the fabrication of uniform nanotip arrays on various substrates over large area at low process temperatures, thereby demonstrating a high potential for practical industrial application. | - |
dc.language | en_US | - |
dc.relation.ispartof | Nano Letters | - |
dc.subject.other | aluminum;argon;crystallin;gallium;gallium nitride;gallium phosphide;hydrogen;methane;polycrystalline silicon;sapphire;silane;silicon;silicon derivative;unclassified drug;article;crystal;cyclotron;electric potential;electron cyclotron resonance;electron microscopy;low temperature;nanoparticle;racemic mixture;technique | - |
dc.title | Generally applicable self-masked dry etching technique for nanotip array fabrication | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1021/nl049925t | - |
dc.identifier.scopus | 2-s2.0-1642528431 | - |
dc.relation.pages | 471-475 | - |
dc.relation.journalvolume | 4 | - |
dc.relation.journalissue | 3 | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.openairetype | journal article | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 凝態科學研究中心 |
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