https://scholars.lib.ntu.edu.tw/handle/123456789/616426
標題: | Methylamine growth of SiCN films using ECR-CVD | 作者: | Wen C.-Y. Wu J.-J. Lo H.J. Chen L.C. Chen K.H. Lin S.T. Yu Y.-C. Wang C.-W. Lin E.-K. LI-CHYONG CHEN |
公開日期: | 2000 | 卷: | 606 | 起(迄)頁: | 115-120 | 來源出版物: | Materials Research Society Symposium - Proceedings | 摘要: | Continuous polycrystalline SiCN films with high nucleation density have been successfully deposited by using CH3NH2 as carbon source gas in an ECR-CVD reactor. From the kinetic point of view, using CH3NH2 as carbon source could provide more abundant active carbon species in the gas phase to enhance the carbon incorporation in the SiCN films. The compositions of the SiCN films analyzed from Rutherford Backscattering Spectroscopy showed that higher [CH3NH2]/[SiH4] ratio led to higher carbon content in the films. Moreover, a lower carbon content was measured when the film was deposited at higher substrate temperature. The direct band gap of the aforementioned SiCN films determined using PzR is around 4.4 eV, indicating a wide band gap material for blue-UV optoelectronics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033678032&partnerID=40&md5=31b22f8672b5172f693fadaf05ba10da https://scholars.lib.ntu.edu.tw/handle/123456789/616426 |
ISSN: | 02729172 | SDG/關鍵字: | Ammonium compounds;Chemical vapor deposition;Crystal structure;Energy gap;Film growth;High resolution electron microscopy;Optoelectronic devices;Rutherford backscattering spectroscopy;Transmission electron microscopy;Methyl amide;Piezoreflectance spectroscopy;Silicon carbon nitride;Semiconducting silicon compounds |
顯示於: | 凝態科學研究中心 |
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