https://scholars.lib.ntu.edu.tw/handle/123456789/616437
標題: | X-ray absorption of Si-C-N thin films: A comparison between crystalline and amorphous phases | 作者: | Chang Y.K. Chen L.C. Wei S.L. YANG-FANG CHEN LI-CHYONG CHEN |
公開日期: | 1999 | 卷: | 86 | 期: | 10 | 起(迄)頁: | 5609-5613 | 來源出版物: | Journal of Applied Physics | 摘要: | X-ray absorption near edge structure (XANES) spectra of crystalline (c)- and amorphous (a)-Si-C-N thin films were measured at the C, N, and Si K edge using the fluorescence and sample drain current modes. A sharp peak similar to the C 1s core exciton in chemical vapor deposition diamond is observed, which can be assigned to the transition from the C 1s to sp3 hybridized states in c-Si-C-N. The C K edge XANES spectrum of a-Si-C-N contains a relatively large Is →π* peak, implying that carbon atoms in the a-Si-C-N film are bonded largely in graphite-like sp2 configurations. A shift of the a-Si-C-N π* peak towards the lower energy by ∼0.3 eV relative to that of c-Si-C-N is observed, which can be attributed to a higher degree of disorder-induced localization of excited electrons. Both a- and c-Si-C-N N K-edge XANES spectra resemble that of α-Si3N4. The Si K-edge absorption spectra of the Si-C-N thin films indicate a proportional combination of local Si-N and Si-C bonds. The increase of the binding energies of excited electrons and the broadening of the spectral features by structural disorder are also observed in the Si K-edge XANES spectrum of the a-Si-C-N film. © 1999 American Institute of Physics. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000467655&doi=10.1063%2f1.371568&partnerID=40&md5=a745f2615b052d00a624ba188cd669f5 https://scholars.lib.ntu.edu.tw/handle/123456789/616437 |
ISSN: | 00218979 | DOI: | 10.1063/1.371568 |
顯示於: | 凝態科學研究中心 |
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