https://scholars.lib.ntu.edu.tw/handle/123456789/616462
標題: | Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition | 作者: | Chen L.C. Yang C.Y. Bhusari D.M. Chen K.H. Lin M.C. Lin J.C. Chuang T.J. LI-CHYONG CHEN |
關鍵字: | Carbon nitride;Microwave PECVD;Transmission electron diffraction;X-Ray photoelectron spectroscopy | 公開日期: | 1996 | 卷: | 5 | 期: | 3-5 | 起(迄)頁: | 514-518 | 來源出版物: | Diamond and Related Materials | 摘要: | We report that carbon nitride thin films can be formed by microwave plasma-enhanced chemical vapor deposition (PECVD). Gas mixtures containing CH4, H2, and NH3 in various ratios were tried as the precursors, and a Si(100) wafer was used as the substrate. The films were characterized by X-ray photoelectron spectroscopy (XPS), and electron microscopy (both SEM and TEM). A Si content of about half of the carbon content was observed when the substrate temperature exceeded 1000 °C. Microscopic investigation revealed the coexistence of large-grain (over 10 μm) and fine-grain (under 1 μm) crystals. We suggest the presence of a crystalline carbon nitride phase corresponding to an α-C3N4 structure (isomorphic to α-Si3N4), which may also be a stable hard material. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000140081&doi=10.1016%2f0925-9635%2896%2980070-7&partnerID=40&md5=c2e4e231de9f2744bd8d9972b1816fa9 https://scholars.lib.ntu.edu.tw/handle/123456789/616462 |
ISSN: | 09259635 | DOI: | 10.1016/0925-9635(96)80070-7 |
顯示於: | 凝態科學研究中心 |
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