https://scholars.lib.ntu.edu.tw/handle/123456789/626477
Title: | Dynamics of transient hole doping in epitaxial graphene | Authors: | Mhatre, SM Tran, NTM Hill, HM Saha, D Walker, ARH CHI-TE LIANG Elmquist, RE Newell, DB Rigosi, AF |
Keywords: | HALL RESISTANCE STANDARDS; ADSORPTION; ELECTRON; DEVICES; PHOTODETECTOR; GENERATION; SCATTERING; TRANSPORT; WATER | Issue Date: | 2022 | Publisher: | AMER PHYSICAL SOC | Journal Volume: | 105 | Journal Issue: | 20 | Source: | PHYSICAL REVIEW B | Abstract: | This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices postexposure were performed with transport temperatures between 300 and 1.5 K. Ambient conditions are applied to nontransport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/626477 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85131362843&doi=10.1103%2fPhysRevB.105.205423&partnerID=40&md5=b17404e2c1982828c5b69c972007d512 |
ISSN: | 2469-9950 | DOI: | 10.1103/PhysRevB.105.205423 | SDG/Keyword: | Graphene; Optical properties; Ambient conditions; Desorption process; Electrical and optical properties; Epitaxial graphene; Hole-doping; Laboratory conditions; Measurements of; Most likely; Post-exposure; Time-scales; Graphene devices |
Appears in Collections: | 物理學系 |
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