https://scholars.lib.ntu.edu.tw/handle/123456789/626481
標題: | Tuning weak localization in single-layer disordered SnSe2/graphene/h-BN field-effect device | 作者: | Chen, WC Chuang, C Wang, TH Yeh, CC Chen, SZ Sakanashi, K Kida, M Lin, LH Lee, PH Wu, PC Wang, SW Watanabe, K Taniguchi, T Hsieh, YP Aoki, N LIANG, CHI-TE |
關鍵字: | weak localization; SnSe2; graphene; h-BN; coherent; VAPOR-DEPOSITION GRAPHENE; SNSE; MAGNETORESISTANCE; HETEROJUNCTIONS; INTERFERENCE | 公開日期: | 2022 | 出版社: | IOP Publishing Ltd | 卷: | 9 | 期: | 4 | 來源出版物: | 2D MATERIALS | 摘要: | We report fabrication and measurements of single-layer SnSe2/chemical vapor deposition (CVD) graphene/hexagonal boron nitride (h-BN) field-effect device. The coherent magnetotransport properties of such a hybrid system are systematically studied so as to obtain a good understanding of the structure which may find potential applications in thermoelectricity, flexible electronics, quantum coherent sensor as well as stress sensing. We observed weak localization well described by the Hikami-Larkin-Nagaoka model and the phase coherence length is around 540 nm for V BG = −20 V at 1 K. The phase coherence length could be effectively changed by controlling the temperature and gate voltage. We also obtain good field-effect dependent properties of atomic-scale SnSe2 ultrathin film/graphene system. Given the current challenges in tuning single-layer SnSe2/CVD graphene on h-BN with a suitable dielectric layer, our results suggest the potential of quantum coherent effect, an effective way for development of future quantum nano-switch device. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/626481 | ISSN: | 2053-1583 | DOI: | 10.1088/2053-1583/ac70e1 |
顯示於: | 物理學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。