https://scholars.lib.ntu.edu.tw/handle/123456789/627009
標題: | Development of Multilevel Organic Phototransistor Memory using Conjugated/Insulating Polymer Blends with a Vertical Phase Separation | 作者: | Chen, YW Lin, YC Yang, WC Yang, YF Peng, YC WEN-CHANG CHEN Lin, BH Yu, YY Chen, WC |
關鍵字: | anthracene; methacrylate-based polymers; nonvolatile photomemory; poly(3-hexylthiophene); pyrene; TRANSISTOR MEMORY; DEVICES | 公開日期: | 2022 | 出版社: | WILEY-V C H VERLAG GMBH | 卷: | 307 | 期: | 11 | 來源出版物: | MACROMOLECULAR MATERIALS AND ENGINEERING | 摘要: | In this work, a series of methacrylate-based polymers bearing benzene (poly(benzyl methacrylate)), naphthalene (poly(2-naphthyl methacrylate)), anthracene (poly(9-anthracenyl methyl methacrylate), PAMA), and pyrene (poly(1-pyrenemethyl methacrylate)) are blended with conjugated polymer of poly(3-hexylthiophene) (P3HT) to perform vertical phase separation during spin-coating. The bilayer structure of the conjugated/insulating polymer blend is driven by their mismatch in surface energy, and the blend films are applied in the phototransistor memory device with the bottom layer of methacrylate-based polymer as a photoactive electret and the top layer of P3HT as a semiconducting channel. It is found that the vertical phase separation morphology, conjugation, and energy levels of the pendant arene groups in the methacrylate-based polymers are highly related to the photoresponse, memory retention/endurance of the phototransistor memory. Therefore, the device comprising the polymer blend of P3HT and PAMA successfully produces a high current contrast of 105 to 254 nm light and 104 to 450 nm light over 104 s. This study provides a facile approach to the fabrication of high-performance phototransistor memory devices. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/627009 | ISSN: | 1438-7492 | DOI: | 10.1002/mame.202200388 |
顯示於: | 化學工程學系 |
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