https://scholars.lib.ntu.edu.tw/handle/123456789/627013
標題: | Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate | 作者: | Chiang, Yun-Chi Yang, Wei-Chen Hung, Chih-Chien Ercan, Ender Chiu, Yu-Cheng Lin, Yan-Cheng WEN-CHANG CHEN |
關鍵字: | acenes; field-effect transistors; floating gate; perovskite quantum dots; photomemory | 公開日期: | 23-十二月-2022 | 來源出版物: | ACS applied materials & interfaces | 摘要: | Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/627013 | ISSN: | 19448244 | DOI: | 10.1021/acsami.2c18064 |
顯示於: | 化學工程學系 |
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