https://scholars.lib.ntu.edu.tw/handle/123456789/629803
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Young, L. B. | en_US |
dc.contributor.author | Lin, Y. H.G. | en_US |
dc.contributor.author | Wan, H. W. | en_US |
dc.contributor.author | Cheng, Y. T. | en_US |
dc.contributor.author | CHIA-KUEN CHENG | en_US |
dc.contributor.author | CHIH-HUNG HSU | en_US |
dc.contributor.author | Pi, T. W. | en_US |
dc.contributor.author | Kwo, J. | en_US |
dc.contributor.author | Hong, M. | en_US |
dc.date.accessioned | 2023-03-27T09:48:43Z | - |
dc.date.available | 2023-03-27T09:48:43Z | - |
dc.date.issued | 2022-01-01 | - |
dc.identifier.isbn | 9781665469067 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/629803 | - |
dc.description.abstract | This paper reviews our work on perfecting high-κ/epi-Si/Ge and high-κ/InGaAs interfaces using in-situ HfO2 and Y2O3, respectively. The heterostructures were grown in our designed ultra-high vacuum (UHV) deposition/ analysis system. The perspective of the work on the related technologies is given. We have employed high-resolution synchrotron radiation photoemission and X-ray diffraction to study the electronic structures and the crystallography of the in-situ prepared gate stacks. Using the in-situ HfO2 on epi-Si/Ge, low interface state density (Dit) values of (2-4) × 1011 eV-1 cm-2 and small charge trapping with a high acceleration factor (γ) of 11 were achieved simultaneously; these are comparable to the state-of-the-art results in the Ge MOS devices using GeOx-based gate stack and thin Si cap via chemical vapor deposition, respectively. The in-situ Y2O3 has effectively passivated InGaAs surface in attaining record-low Dit values of (2-4) × 1011 eV-1cm-2 and high thermal stability of 800 among the high-κ/InGaAs heterostructures. The results have enabled the attainment of record-low subthreshold slope (SS) values in planar inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs). The SS values of 22 mV/dec at 77 K and a slope factor m of 1.33, the lowest among the planar InGaAs MOSFETs, were achieved, which are comparable to those obtained in the ultra-thin-body InGaAs FinFETs. | en_US |
dc.relation.ispartof | Proceedings of 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022 | en_US |
dc.title | Perfecting high-κ/Ge and /InGaAs interfaces - push for ultimate CMOS and emerging cryogenic electronic devices | en_US |
dc.type | conference paper | en_US |
dc.identifier.doi | 10.1109/ICSICT55466.2022.9963224 | - |
dc.identifier.scopus | 2-s2.0-85143967604 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85143967604 | - |
dc.relation.pageend | 4 | en_US |
item.cerifentitytype | Publications | - |
item.openairetype | conference paper | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
crisitem.author.dept | Horticulture and Landscape Architecture | - |
crisitem.author.orcid | 0000-0001-7081-7188 | - |
crisitem.author.parentorg | College of Bioresources and Agriculture | - |
顯示於: | 園藝暨景觀學系 |
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