|Title:||Low-Temperature Solution-Processed ZnSnO Ozone Gas Sensors Using UV-Assisted Thermal Annealing||Authors:||Lin, Yan Fong
Jiang, You Yi
Huang, Bo Lin
Huang, Po Yen
Huang, Chun Ying
|Keywords:||GALLIUM-ZINC OXIDE; THIN-FILM; ULTRAVIOLET; PHOTODETECTOR||Issue Date:||1-Nov-2022||Publisher:||ELECTROCHEMICAL SOC INC||Journal Volume:||169||Journal Issue:||11||Source:||Journal of the Electrochemical Society||Abstract:||
Ultraviolet-assisted thermal annealing (UVTA) has been widely used to fabricate solution-processed amorphous oxide semiconductor (AOS)-based transistors and photodetectors. However, this method has not been used for AOS-based gas sensors, even though AOS is a good gas sensing material. This study determines the effect of UVTA on the electrical properties of In-free amorphous ZnSnO (ZTO) thin films and their ozone (O3) gas sensing characteristics. UV light from a Mercury lamp has sufficient energy to decompose the organic- and hydrogen-based impurities completely, which promotes the formation of metal oxide networks, so the quality of ZTO films is greatly increased by increasing treatment time. A relatively high gas response of 1.42 with a fast response/recovery time (124/78 s) is achieved. This strategy allows the fabrication of ZTO gas sensors at low temperature (150 °C) and is applicable to flexible electronics.
|Appears in Collections:||工程科學及海洋工程學系|
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