https://scholars.lib.ntu.edu.tw/handle/123456789/632026
標題: | Synthesis of ABCBA-type miktoarm H-shaped copolymers with poly(3-hexylthiophene) segments and their application to intrinsically stretchable photonic transistor memory | 作者: | Inagaki, Shin Sung, Chih Yuan Chang, Ai Chun Lin, Yan Cheng WEN-CHANG CHEN Higashihara, Tomoya |
關鍵字: | CHAIN-GROWTH POLYMERIZATION; SEMICONDUCTING POLYMER; CHARGE-TRANSPORT; SIDE-CHAINS; PERFORMANCE; ELASTICITY; MORPHOLOGY | 公開日期: | 1-一月-2023 | 出版社: | ROYAL SOC CHEMISTRY | 卷: | 11 | 期: | 19 | 起(迄)頁: | 6305 | 來源出版物: | Journal of Materials Chemistry C | 摘要: | Recently, semiconducting polymers with intrinsic elasticity have garnered attention for their application in wearable devices. Herein, we synthesized a novel ABCBA-type miktoarm H-shaped copolymer (where A, B, and C represent polystyrene (PS), poly(3-hexylthiophene) (P3HT), and poly(n-butyl acrylate) (PnBA), respectively) via a Cu-catalyzed azide-alkyne cycloaddition reaction between in-chain-functionalized PS-b-P3HT with an alkynyl group and α,ω-chain-end-functionalized PnBA with azide groups. The thin films of the ABCBA-type miktoarm H-shaped copolymers exhibited high elasticity because of an inner PnBA segment with a low glass transition temperature and good photonic transistor memory properties because of outer PS-b-P3HT segments. They also exhibited good memory endurance along write-read-erase-read cycles, a wide memory window, a high ON/OFF ratio, and excellent retention properties. Upon stretching, the polymer films exhibited crack-free morphologies wherein large-ranged phase-separated domains were sacrificed to dissipate the applied stress while maintaining short-ranged lamellar crystal structures. Our results establish a pioneering strategy for creating intrinsically stretchable memory using ABCBA-type miktoarm H-shaped copolymers. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/632026 | ISSN: | 20507526 | DOI: | 10.1039/d3tc00690e |
顯示於: | 化學工程學系 |
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