https://scholars.lib.ntu.edu.tw/handle/123456789/632077
標題: | 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits | 作者: | Li C.-K Wu C.-K Hsu C.-C Lu L.-S Li H Lu T.-C YUH-RENN WU |
公開日期: | 2016 | 卷: | 6 | 期: | 5 | 來源出版物: | AIP Advances | 摘要: | In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections. © 2016 Author(s). |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84971237987&doi=10.1063%2f1.4950771&partnerID=40&md5=2ab4879be6632b5730e1fe699312b648 https://scholars.lib.ntu.edu.tw/handle/123456789/632077 |
ISSN: | 21583226 | DOI: | 10.1063/1.4950771 | SDG/關鍵字: | Charge injection; Efficiency; III-V semiconductors; Light emitting diodes; Semiconductor quantum wells; Solvents; 3-D numerical modeling; Drift diffusion; Non-radiative recombinations; Pit structures; Radiative efficiency; Threading dislocation densities; Three-dimensional stress; Turn-on voltages; Quantum efficiency |
顯示於: | 電機工程學系 |
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