https://scholars.lib.ntu.edu.tw/handle/123456789/632755
標題: | An Anti-Ambipolar Cryo-Phototransistor | 作者: | Mathew, RJ Cheng, KH Inbaraj, CRP Sankar, R Gao, XPA YIT-TSONG CHEN |
關鍵字: | 2D materials; anti-ambipolar transistors; low-temperature electrical transport; MoSe2; photodetectors; SnS; van der Waal heterostructures; SPECTRAL RESPONSE; HIGH-PERFORMANCE; SNS; PHOTODETECTORS; ELECTRONICS; SULFIDE; MOSE2 | 公開日期: | 2023 | 出版社: | WILEY | 來源出版物: | ADVANCED ELECTRONIC MATERIALS | 摘要: | Novel anti-ambipolar transistors (AATs) are gate tunable rectifiers with a marked potential for multi-valued logic circuits. In this work, the optoelectronic applications of AATs in cryogenic conditions are studied, of which the AAT devices consist of vertically stacked p-SnS and n- MoSe2 nanoflakes to form a type-II staggered band alignment. An electrostatically tunable p-SnS/n-MoSe2 cryo-phototransistor is presented with unique anti-ambipolar characteristics and cryogenic-enhanced optoelectronic performance. The cryo-phototransistor exhibits a sharp and highly symmetric anti-ambipolar transfer curve at 77 K with the peak-to-valley ratio of 103 operating under a low bias voltage of 1 V. The high cooling-enhanced charge mobilities in the cryo-phototransistor grant this AAT device remarkable photodetection capabilities. At 77 K, the p-SnS/n-MoSe2 cryo-phototransistor, holding a broad photoresponse in the spectral range of 250−900 nm, demonstrates its high responsivity of 2 × 104 A W−1 and detectivity of 7.5 × 1013 Jones with the excitation at 532 nm. The high-performance p-SnS/n-MoSe2 low-dimensional phototransistor with low operating voltages at 77−150 K is eligible for optoelectronic applications in cryogenic environments. Furthermore, the cryo-characteristics of this heterostructure can be further extended to design the mul-tivalued logic circuits operated in cryogenic conditions. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/632755 | ISSN: | 2199-160X | DOI: | 10.1002/aelm.202300095 |
顯示於: | 化學系 |
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