https://scholars.lib.ntu.edu.tw/handle/123456789/633180
標題: | Investigating the structure–sensitivity relationship of photosensitive polyimide formulated by using a photobase generator | 作者: | Chang, En Chi Tseng, Ling Ya Liu, Yu Chen, Chun Kai Kuo, Chi Ching Ueda, Mitsuru Lin, Yan Cheng WEN-CHANG CHEN |
關鍵字: | photobase generator | photoresist | photosensitive polyimide | sensitivity | transparency | 公開日期: | 1-一月-2023 | 來源出版物: | Journal of Polymer Science | 摘要: | Photosensitive polyimides (PSPIs) have been widely used in the buffer coating layer and insulation layer due to their excellent thermal and mechanical stability. In this work, a series of negative-type PSPIs based on poly(amic acid) (PAA) and a photobase generator (PBG) have been developed. Two diamines of 4,4′-oxydianiline (ODA), 3,3′-diaminodiphenyl sulfone (SDA), and four dianhydrides of pyromellitic dianhydride (PMDA), 3,3′,4,4′-biphenyltetracarboxylic dianhydride (BPDA), 4,4′-oxydiphthalic anhydride (ODPA) and cyclobutene-1,2,3,4-tetracarboxylic dianhydride (CBDA) are copolymerized to PAA through polyaddition, and the PAA is further thermally imidized to polyimide (PI). Through scrutinizing the structure–sensitivity relationship of these PIs, we find that the rigidity and transparency of the PAA/PI backbone play an important role in the sensitivity and contrast of PSPI. Accordingly, PSPI (SDA-ODPA), possessing high optical transparency and a low rigidity represented by the low glass transition point, is capable of providing good photosensitivity of 30 mJ/cm2, a high contrast of 2.46, and an excellent pattern resolution of 4 μm after optimizing the prebaking (100°C for 5 min), exposure dose (380 mJ/cm2), post-exposure baking (130°C for 7 min), and development parameters. This work provides the concept of structural design for negative-type PSPI in the microelectronic application. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/633180 | ISSN: | 26424150 | DOI: | 10.1002/pol.20230230 |
顯示於: | 化學工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。