https://scholars.lib.ntu.edu.tw/handle/123456789/640137
標題: | Enhanced performance of phototransistor memory by optimizing the block copolymer architectures comprising Polyfluorenes and hydrogen-bonded insulating coils | 作者: | Lin, Chen Fu Wu, Ya Shuan Hsieh, Hui Ching Chen, Wei Cheng Isono, Takuya Satoh, Toshifumi Lin, Yan Cheng Kuo, Chi Ching WEN-CHANG CHEN |
關鍵字: | Block copolymers | Field-effect transistors | Nonvolatile memory | Photomemory | Polyfluorene | 公開日期: | 1-三月-2024 | 卷: | 295 | 來源出版物: | Polymer | 摘要: | Photonic transistor memory, which adopts the structure of a field-effect transistor, combines optical and electronic principles. Conjugated block copolymers (BCPs) are promising electret materials for optoelectronic applications. In this study, a series of BCPs comprising poly[2,7-(9,9-dioctylfluorene)] (PFO: A block) and poly(n-butyl acrylate-random-2-ureido-4[1H]pyrimidinone acrylate) (nBA-r-UPyA: B block), with linear-diblock (AB), branched (AB2), and linear-triblock (BAB) architectures, are synthesized to investigate hydrogen bonding effect stemming from UPyA groups. After thermal annealing, the soft segments of BCPs lead to self-assembled arrangements and smoother morphologies, providing an excellent interface for the deposition of the semiconducting channel layer. Furthermore, forming vertical phase-separated structures through thermal annealing significantly enhances the electron-capture capability. Subsequently, the BCP materials are applied in photonic transistor memory and conducted with electrical characterization. Our study reveals that different compositions of BCP architectures have a corresponding impact on the performance of photonic transistor memory devices. Consequently, AB of PFO-b-P(nBA-r-UPyA)s with a linear-diblock architecture presents an outperforming memory ratio of ∼105, outstanding memory stability over 104 s, and durability to consecutive write/erase processes. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/640137 | ISSN: | 00323861 | DOI: | 10.1016/j.polymer.2024.126772 |
顯示於: | 化學工程學系 |
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