DC 欄位 | 值 | 語言 |
dc.contributor | 廖運炫 | zh-TW |
dc.contributor | 臺灣大學:機械工程學研究所 | zh-TW |
dc.contributor.author | 黃昭維 | zh-TW |
dc.contributor.author | Huang, Chao-Wei | en |
dc.creator | 黃昭維 | zh-TW |
dc.creator | Huang, Chao-Wei | en |
dc.date | 2009 | en |
dc.date.accessioned | 2010-06-30T09:21:04Z | - |
dc.date.accessioned | 2018-06-28T17:31:57Z | - |
dc.date.available | 2010-06-30T09:21:04Z | - |
dc.date.available | 2018-06-28T17:31:57Z | - |
dc.date.issued | 2009 | - |
dc.identifier.other | U0001-1408200915354700 | en |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/187139 | - |
dc.description.abstract | 碳化矽陶瓷因具有優良的機械及化學性質,已廣泛地應用於耐磨耗與耐腐蝕工程上,近年來更被應用在光學元件及半導體等產業上,也因此在拋光效率與表面精度上的要求變得更加嚴苛。機械化學拋光法使用較軟的磨料拋光較硬的工件,不會有傳統硬磨料造成的微小刮痕與次表面破壞,也不會有化學機械拋光法化學液的回收問題,只是在拋光效率上還有其改進空間。為了提升其拋光效率,以自行設計的超音波振動輔助機械化學拋光裝置對碳化矽陶瓷進行拋光實驗,探討利用超音波振動提高拋光效率的可行性,並選取施加壓力、工件轉速及超音波功率等拋光參數,研究超音波振動對材料移除深度、表面粗糙度與材料移除機制之影響。實驗結果顯示,加入超音波振動能夠有效提高拋光效率,可提升約60~70%的材料移除率。在較高的壓力下,超音波對材料移除深度的增加有較明顯的效果,而超音波的功率大小則與材料移除深度的提升呈現正相關性。 | zh-TW |
dc.description.abstract | Silicon carbide (SiC) ceramic had been wildly used in wear and corrosion resistance because of excellent mechanical and chemical properties. For the past few years, it was also used in optical component and semi-conductor industry, and therefore been requested its polishing efficiency and surface quality. The mechanochemical polishing (MCP) process uses soft abrasive to polish hard workpiece without micro scratch and subsurface damage, and has no recycle problem of chemical slurry. But its polishing efficiency still need to improve. In order to improve its polishing efficiency, this study proceeds a MCP experiment of sintered SiC with self-designed ultrasonic assisted apparatus, and confirms the possibility of enhancing its polishing efficiency with ultrasonic vibration. And this study selects the parameters such as processing pressure, workpiece speed and ultrasonic power to clarify the influence of ultrasonic vibration on material removal quantity, surface roughness and removal mechanism. The result of study shows that the ultrasonic vibration can effectively improve polishing efficiency, and the material removal quantity increased about 60~70%. The effect is more obvious under higher processing pressure, and the increasing of material removal quantity appears positive correlation with ultrasonic power. | en |
dc.description.tableofcontents | 誌謝 i要 iibstract iii錄 iv目錄 vii目錄 x號說明 xi一章 緒論 1.1 研究動機 1.2 文獻回顧 3.3 研究目的 9.4 本文結構 10二章 相關理論 11.1 機械化學拋光 11.1.1 固相化學反應 12.1.2 催化反應 12.1.3 Preston’s equation 13.2 超音波加工原理 15.2.1 超音波振動子 15.2.1.1 磁伸縮振動子 16.2.1.2 壓電振動子 17.2.2 振幅放大喇叭之設計 19.2.3 超音波振動下的摩擦熱 21.3 表面粗糙度 24三章 實驗設備與實驗規劃 28.1 實驗設備 28.2 實驗規劃 33.2.1 實驗系統架構 33.2.2 實驗步驟 36.2.3 實驗量測方法 38四章 實驗結果與討論 40.1 超音波振動對提高拋光效率可行性之探討 40.1.1 初步實驗 40.1.2 長時間拋光之實驗結果 41.1.3 碳化矽試片表面隨時間變化之情形 43.2 超音波振動在不同拋光參數下對拋光結果之影響 46.2.1 施加壓力對拋光結果之影響 46.2.2 工件速度對拋光結果之影響 50.2.3 超音波功率對拋光結果之影響 54.2.4 超音波振動下之材料移除率 55.2.5 小結 57.3 超音波振動對材料移除機制之影響 58.3.1 氧化鐵於碳化矽的機械化學拋光法之應用 58.3.2 超音波振動下的材料移除機制 60五章 結論與未來展望 63.1 結論 63.2 未來展望 65考文獻 66者簡歷 70 | en |
dc.format.extent | 5562911 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | zh-TW | en |
dc.language.iso | en_US | - |
dc.subject | 超音波 | zh-TW |
dc.subject | 機械化學拋光 | zh-TW |
dc.subject | 碳化矽 | zh-TW |
dc.subject | ultrasonic | en |
dc.subject | mechanochemical polishing | en |
dc.subject | silicon carbide | en |
dc.title | 超音波輔助應用於碳化矽的機械化學拋光 | zh-TW |
dc.title | Ultrasonic Assisted Mechanochemical Polishing of Silicon Carbide | en |
dc.type | thesis | en |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/187139/1/ntu-98-R96522719-1.pdf | - |
item.languageiso639-1 | en_US | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_46ec | - |
item.openairetype | thesis | - |
item.grantfulltext | open | - |
顯示於: | 機械工程學系
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