DC 欄位 | 值 | 語言 |
dc.contributor | 臺灣大學: 材料科學與工程學研究所 | zh-TW |
dc.contributor | 連雙喜 | zh |
dc.contributor.author | 林欣蓉 | zh-TW |
dc.contributor.author | Lin, Hsin-Jung | en |
dc.creator | 林欣蓉 | zh-TW |
dc.creator | Lin, Hsin-Jung | en |
dc.date | 2012 | en |
dc.date.accessioned | 2013-03-22T02:41:36Z | - |
dc.date.accessioned | 2018-06-28T21:50:29Z | - |
dc.date.available | 2013-03-22T02:41:36Z | - |
dc.date.available | 2018-06-28T21:50:29Z | - |
dc.date.issued | 2012 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/251645 | - |
dc.description.abstract | 為減少製造多晶矽太陽能電池時之電力成本,在光伏產業對於大型多晶矽的鑄錠需求日益增加,日前生產多晶矽的長晶爐約為450公斤左右的爐體,如將爐體提高至600公斤將可降低生長多晶矽單批生產的成本,然而大尺寸的模擬與實驗在過去的文獻少有提到,但其長晶製程參數複雜,如長晶爐的幾何形狀,隔熱器往上提升的速度,頂部引入氬氣的流速等,均會影響矽融湯的溫度場(熱場)分佈與液面形狀及結晶大小與缺陷,及雜質碳氧的分佈,因此需要進一步的探討。又因為矽原料的價格成本高,在初生產時對設備的了解不完全導致浪費,有鑑於此,我們將透過模擬的計算,對長晶爐的溫度分佈及功率消耗進行討論研究。
本研究將針對600公斤討論多晶矽 (multi-crystalline, mc-Si) 的方向性凝固,與不同爐子的設計參數,如石墨坩堝,石墨加熱體、石墨接受板(susceptor)及隔熱罩底部支撐座等尺寸及形狀設計對加熱功率的影響。研究所得模擬結果期望提供未來多晶矽(mc-Si)方向性凝固之長晶爐的製程參數參考,並為改進其熱場區域設計的發展,不同石墨材料之坩堝的發展、隔熱罩/材厚度及熱傳導係數之討論、底部中心柱支撐材的直徑大小對於整體熱通量的影響、氣體導流設計的研究,其對於氬氣消耗的減少、雜質分佈的影響,以改良並使設備升級,期望能降低生產成本及提高晶錠的品質。 | zh-TW |
dc.description.abstract | The photovoltaic industry has demand of large poly-silicon ingot in order to reduce the cost of manufacturing solar panel and electric power. A directional solidification of 600 kg poly-silicon ingot will be successful only with optimal control of complex processing parameters to achieve the desired temperature and impurities distribution. In order to save the expanse of experiment and materials, simulation is an effective and time saving method to obtain the relationship between varied variables. The major works of this study reveal the correlation between power consumption, size and thermal physical properties of furnace critical parts, which include the thickness, thermal conductivities of graphite susceptors and the bottom plates. Calculated temperature distribution and meniscus interface of solidification will be presented with different conditions of geometries and materials properties. The result of simulation show reasonable correlation with the experimental values of power measurement at different solidified parts of silicon melt. It has also found that the thickness and thermal conductivity of graphite susceptor play most important role for the power consumption of crystal growth. | en |
dc.format.extent | 140 bytes | - |
dc.format.mimetype | text/html | - |
dc.language | zh | en |
dc.language.iso | en_US | - |
dc.subject | 多晶矽 | zh |
dc.subject | 方向性凝固 | zh |
dc.subject | 溫度分佈 | zh |
dc.subject | 耗電功率 | zh |
dc.subject | 熱傳導係數 | zh |
dc.subject | 氣體導流設計 | zh |
dc.subject | 模擬 | zh |
dc.subject | poly-silicon | en |
dc.subject | directional solidification | en |
dc.subject | temperature and impurities distribution | en |
dc.subject | simulation | en |
dc.subject | power consumption | en |
dc.subject.classification | [SDGs]SDG7 | - |
dc.title | 600公斤多晶矽長晶功率與製程參數之關係 | zh-TW |
dc.title | Relationships between Power Consumption and Process Settings of 600kg Poly-Silicon | en |
dc.type | thesis | en |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/251645/1/index.html | - |
item.openairetype | thesis | - |
item.fulltext | with fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_46ec | - |
item.grantfulltext | open | - |
item.languageiso639-1 | en_US | - |
item.cerifentitytype | Publications | - |
顯示於: | 材料科學與工程學系
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