https://scholars.lib.ntu.edu.tw/handle/123456789/74995
標題: | Formation of Si nanoclusters in amorphous silicon thin films by excimer laser annealing | 作者: | Yeh, Jiun-Lin Chen, Hsuen-Li Shih, An Lee, Si-Chen |
公開日期: | 1999 | 卷: | 35 | 期: | 23 | 起(迄)頁: | 2058-2059 | 來源出版物: | Electronics Letters | 摘要: | It is shown that an Si nanocluster is formed in an amorphous silicon (a-Si) thin film following irradiation using a pulsed KrF excimer laser. The photoluminescence spectrum of the irradiated 70 nm thick a-Si film at a power density of 180 mJ/cm2 at one shot shows two luminescence bands centred at approx. 1.31 and 1.76eV. The peak emission wavelength depends on the silicon nanocluster size, which is approx. 3-4 nm. A mechanism for the formation of Si nanoclusters is also proposed. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/95606 http://ntur.lib.ntu.edu.tw/bitstream/246246/95606/1/06.pdf https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033351897&doi=10.1049%2fel%3a19991361&partnerID=40&md5=0daf6826a5440e13a7a3b018e946a15c |
ISSN: | 00135194 | DOI: | 10.1049/el:19991361 | SDG/關鍵字: | Annealing; Excimer lasers; Irradiation; Nanotechnology; Photoluminescence; Porous silicon; Pulsed laser applications; Spectrum analysis; Thin films; Amorphous silicon thin films; Excimer laser annealing; Luminescence bands; Power density; Silicon nanoclusters; Amorphous silicon |
顯示於: | 材料科學與工程學系 |
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