https://scholars.lib.ntu.edu.tw/handle/123456789/74995
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yeh, Jiun-Lin | en |
dc.contributor.author | Chen, Hsuen-Li | en |
dc.contributor.author | Shih, An | en |
dc.contributor.author | Lee, Si-Chen | en |
dc.creator | Shih, An;Yeh, Jiun-Lin;Chen, Hsuen-Li;Lee, Si-Chen | - |
dc.date.accessioned | 2008-12-31T07:41:43Z | - |
dc.date.accessioned | 2018-06-28T22:07:17Z | - |
dc.date.available | 2008-12-31T07:41:43Z | - |
dc.date.available | 2018-06-28T22:07:17Z | - |
dc.date.issued | 1999 | - |
dc.identifier.issn | 00135194 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/95606 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw/bitstream/246246/95606/1/06.pdf | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033351897&doi=10.1049%2fel%3a19991361&partnerID=40&md5=0daf6826a5440e13a7a3b018e946a15c | - |
dc.description.abstract | It is shown that an Si nanocluster is formed in an amorphous silicon (a-Si) thin film following irradiation using a pulsed KrF excimer laser. The photoluminescence spectrum of the irradiated 70 nm thick a-Si film at a power density of 180 mJ/cm2 at one shot shows two luminescence bands centred at approx. 1.31 and 1.76eV. The peak emission wavelength depends on the silicon nanocluster size, which is approx. 3-4 nm. A mechanism for the formation of Si nanoclusters is also proposed. | - |
dc.language | en | en |
dc.relation.ispartof | Electronics Letters | en_US |
dc.subject.other | Annealing; Excimer lasers; Irradiation; Nanotechnology; Photoluminescence; Porous silicon; Pulsed laser applications; Spectrum analysis; Thin films; Amorphous silicon thin films; Excimer laser annealing; Luminescence bands; Power density; Silicon nanoclusters; Amorphous silicon | - |
dc.title | Formation of Si nanoclusters in amorphous silicon thin films by excimer laser annealing | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1049/el:19991361 | - |
dc.identifier.scopus | 2-s2.0-0033351897 | - |
item.fulltext | with fulltext | - |
item.grantfulltext | open | - |
dc.relation.pages | 2058-2059 | - |
dc.relation.journalvolume | 35 | - |
dc.relation.journalissue | 23 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/95606/1/06.pdf | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | open | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | TSMC-NTU Joint Research Center | - |
crisitem.author.orcid | 0000-0002-7569-572X | - |
crisitem.author.orcid | 0000-0002-3788-2030 | - |
crisitem.author.parentorg | College of Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 材料科學與工程學系 |
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