Browsing by Author "Chiang H.-L"
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Publication Dual crossover mechanisms of benevolent supervision on followers' contextual performance and emotional exhaustion alleviation(2022) ;Chuang Y.-T ;Chiang H.-L ;Lin A.-P; Chuang Y.-T;Chiang H.-L;Lin A.-P;Lien Y.-C.Purpose: Adopting conservation of resources (COR) theory as a guiding framework, this study proposes that benevolent supervision (BS) is a feasible leadership style for building a positive resource gain process in subordinates' extra-role actions and reducing their exhaustion, and leader-member exchange (LMX) and positive affect (PA) serve as indirect crossover mechanisms. Design/methodology/approach: Surveys were conducted at three-time points with four-week intervals. A total of 304 subordinates and 55 supervisors at a Taiwanese university participated in the surveys, and a multilevel model was used to test the hypotheses. Findings: The results showed that prior BS (time 1) was positively associated with subordinates' subsequent LMX and PA (time 2). LMX mediated the relationship between BS and subsequent supervisor-rated contextual performance (time 3), and PA mediated the relationship between BS and subordinate-rated emotional exhaustion (time 3). In addition, supervisors' learning orientation positively moderated the relationship between BS and contextual performance via LMX, whereas supervisors' performance orientation negatively moderated this relationship. Practical implications: The results of the study encourage leaders to exhibit benevolence toward subordinates, increase subordinates' contextual performance and enhance personal feelings, thereby ultimately benefitting the organization. Originality/value: This study reveals that BS is a source of resource investment in the process of subordinates' positive job (contextual performance) and personal (emotional exhaustion) resource gains through social exchange (LMX) and affective (PA) crossover mechanisms and that supervisors' goal inclinations impact this process. ? 2021, Emerald Publishing Limited.journal article3Scopus© Citations 8 - Some of the metrics are blocked by yourconsent settings
Publication High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing(2021); ;Liu C.-J ;Chiang H.-L ;Wang J.-F ;Cheng C.-C ;Chen T.-C ;Chang M.-F.Hu V.P.-H;Liu C.-J;Chiang H.-L;Wang J.-F;Cheng C.-C;Chen T.-C;Chang M.-F.Cryogenic on-chip memory requires low energy consumption for enabling cryogenic and exascale computing. With FinFET Si data calibration, this work clearly demonstrates that the 4T cryogenic SRAM surpasses various kinds of the 6T SRAM in area, speed, stability, and energy efficiency at both 77K and 300K. Compared to the 6T SRAM with regular threshold voltage in high-density design (6T-RVt-HD) at 300K, the 4T cryogenic SRAM at 77K shows 20.3% cell area reduction, 44% reduction in read access time, 46% improvement in write time, 2.3× improvement in write stability, and 53% reduction in energy-delay product (EDP). Considering the cooling energy consumption at 77K, the 4T cryogenic SRAMs exhibit 33% EDP reduction compared to the 6T-RVt-HD SRAMs at 77K. The proposed high-density and high-speed 4T cryogenic SRAMs with low access energy and superior stability could be promising candidates for cryogenic high-performance-computing (HPC) applications. © 2021 IEEE.conference paper4Scopus© Citations 13